Gmdss_e3 : Element 3 - 160/605
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| For current to flow in an NPN silicon transistor's emitter-collector junction, the base must be: |
| A) At least 0.4 volts positive with respect to the emitter. |
| B) At a negative voltage with respect to the emitter. |
| C) At least 0.7 volts positive with respect to the emitter. |
| D) At least 0.7 volts negative with respect to the emitter. |
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